Difference between revisions of "Semiconductors"

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This way, the current can flow through the diode and dissipate in the resistor. Yet, the diode prevents a short circuit from occuring when the switch is closed.
This way, the current can flow through the diode and dissipate in the resistor. Yet, the diode prevents a short circuit from occuring when the switch is closed.

====Peak Detector===
We can make a peak detector if we hook up our circuit like this:

[[Image:peak_detector_schematic.jpg]]

The graph of the input and output voltages looks like this:

[[Image:peak_detector_graph.jpg]]

There are two problems with this circuit: First, the voltage of the peak must be greater than the voltage drop, or we won't detect anything. Second, the circuit has a very low impedance, and the capacitor drains a lot of current. A better peak detector can be built with op-amps.

Revision as of 17:17, 19 June 2006

Conductors and Insulators

Conductors are able to accomodate an electron flow through them because the electrons in the atoms are not tightly bound to thier atoms. When an electron leaves its atom, it leaves behind hole, which because of the absence of the electron, is positivly charged since the atom started out neutral. This hole can be modeled as a positive charge. As electrons move towards one end of the conductor, they will leave holes at the opposite end, thus creating a "flow" of holes in the direction opposite the electron flow.

File:Conductor diagram.jpg

The electrons in insulators are tightly bound to thier atoms, so they cannot flow.

File:Insulator diagram.jpg

Semiconductors

Semiconductors, such as silicon, are somewhere in between a conductor and an insulator. Some electrons in the semi-conducor are allowed to flow, especially when relased by heat or light. Semiconductors allow us to build non-linear devices, such as computers.

We can increase the conductivity of semiconductors by doping, or interspersing atoms with more valence electrons into the lattice structure.

For example, we can dope silicon (which as four valence electrons) with arsenic (which has 5 valence electrons). The extra electron in the arsenic atom cannot form a covalent bond with the neighboring atoms, and thus is loosely bound and available as a charge carrier. This creates an n-type semiconductor, which has negative charge carriers.

We can also dope the silicon with boron or galium, which have 3 valence electrons. The lack of an electron to complete all four covalent bonds the lattice structure leaves a hole into which an electron can fall. This creates a p-type semiconductor, which has positive charge charriers.

p-n junctions

When we sandwich a p-type semiconductor with an n-type semiconductor, the electrons at the interface will jump into the holes, creating a depletion zone—an insulating section of semiconductor devoid of either type of charge carrier.

The electrons will jump into the holes across the border:

File:P n junction.jpg

and will form the depletion zone:

File:P n junction depletion zone.jpg

If put a voltage across the semiconductors with the positive voltage on the p-type semiconductor, we will create a forward bias. The positive voltage will repel the holes, and the negative voltage will repel the electrons, pushing both towards the junction. This movement shrinks the depletion zone, and if our voltage is high enough, the depletion zone will become so thin that electrons will be able to tunnel through it. When this happens, current will be able to flow through the semi-conductors.

File:P n forward bias.jpg

On the other hand, if we connect the positive voltage to the n-type semiconductor and the negative voltage to the p-type semiconductor, we will create a reverse bias. The negative voltage will attract the holes, and the positive voltage will attract the electrons. This will pull both holes and electrons away from the junction and widen the depletion zone. Because of this, no current can flow through the semiconductors. (However, if the voltage is high enough, current can still force its way across.)

File:P n reverse bias.jpg

Diodes

Symbol for the diode:File:Diode symbol.jpg

We can take advantage of the properties of a p-n junction to make a diode, which is an electrical component that only allows current flow in one direction. A diode made of silicon needs about 0.7V across it in order to conduct. At about -100V, the diode will fail and the current will force its way though.

File:Diode N4002 profile.jpg

Applications of Diodes

Half-Wave Rectifier

A half-wave rectifier will cut off half of a sine wave, leaving only the postive or negative side.

The schematic for a simple retifier:

File:Half wave rectifier schematic.jpg

The graph for half-wave rectifier:

File:Half wave rectifier graph.jpg

Flyback Diode

An approximate model of a DC motor is a resistor and inductor in series. If we suddenly break the ciruit to switch off the motor, the inductor will continue to try and push current though, resulting in a sudden spike in voltage (). Mechanically, this is like trying to bring the velocity of a certain moving mass to zero, instantly. We can solve this problem by adding a diode, as shown:

File:Diode flyback schematic.jpg

This way, the current can flow through the diode and dissipate in the resistor. Yet, the diode prevents a short circuit from occuring when the switch is closed.

=Peak Detector

We can make a peak detector if we hook up our circuit like this:

File:Peak detector schematic.jpg

The graph of the input and output voltages looks like this:

File:Peak detector graph.jpg

There are two problems with this circuit: First, the voltage of the peak must be greater than the voltage drop, or we won't detect anything. Second, the circuit has a very low impedance, and the capacitor drains a lot of current. A better peak detector can be built with op-amps.