Difference between revisions of "IR Target Illumination"

From Mech
Jump to navigationJump to search
 
 
Line 1: Line 1:
===Overview===
===Overview===


The TSHF 5210 is a high radiant power, 890 nm emitting, GaAlAs, high-speed infrared emitting diode.
The TSHF 5210 is a high radiant power, 890 nm emitting, GaAlAs, high-speed infrared emitting diode. They can be used to illuminate a target in the infrared range or they can be used as active signals to other devices for line-of-sight signal transfer.


==Summary==
==Summary==

* 100 mA DC
* ~200 mA AC (duty cycle ~50%, >10 kHz)
* ~1 A AC (duty cycle ~5%, >10 kHz)
* +/- 10 degrees - angle of half intensity
* ~1.4 V (forward voltage at 100 mA)
* ~2.3 V (forward voltage at 1 A)
* ~50 mW radiant power (at 100 mA)
* 12 MHz cutoff frequency (70 mA DC + 30 mA P-P)

This IRED is good for high intensity IR illumination with reasonable half intensity angles and fairly high radiant power.


==Test Circuit==
==Test Circuit==

Latest revision as of 22:54, 12 December 2008

Overview

The TSHF 5210 is a high radiant power, 890 nm emitting, GaAlAs, high-speed infrared emitting diode. They can be used to illuminate a target in the infrared range or they can be used as active signals to other devices for line-of-sight signal transfer.

Summary

  • 100 mA DC
  • ~200 mA AC (duty cycle ~50%, >10 kHz)
  • ~1 A AC (duty cycle ~5%, >10 kHz)
  • +/- 10 degrees - angle of half intensity
  • ~1.4 V (forward voltage at 100 mA)
  • ~2.3 V (forward voltage at 1 A)
  • ~50 mW radiant power (at 100 mA)
  • 12 MHz cutoff frequency (70 mA DC + 30 mA P-P)

This IRED is good for high intensity IR illumination with reasonable half intensity angles and fairly high radiant power.

Test Circuit